[MV] Soliton-Dependent Electronic Transport across Bilayer Graphene Domain Walls
First experimental evidence of differences in electronic transport across shear vs. tensile soliton walls in bilayer graphene. Shear and tensile solitons have unique electronic band structures because they have different atomic configurations. This leads to high transmission of electrons across shear solitons (lower resistance) and lower, carrier density dependent transmission across tensile solitons (higher resistance). This is interesting to think about in the context of twisted bilayer graphene as well, where generally shear solitons form as a result of reconstruction, but strain and defects in the moiré pattern can cause deviation away from true shear behavior.